Перегляд за автором "Starzhinskiy, N."

Сортувати за: Порядок: Результатів:

  • Detectors for selective registration of charged particles and gamma-quanta 
    Ryzhikov, V.; Starzhinskiy, N.; Katrunov, K.; Gal’chinetskiy, L.; Chernikov, V.; Zelenskaya, O.; Krivonosov, E.; Litvinov, L.; Galkin, S.; Loseva, E. (Вопросы атомной науки и техники, 2002)
    A new design is proposed and described of a combined detector (CD) for simultaneous detection of charged particles and gamma-quanta. The CD comprises a single crystalline plate of ZnSe(Te) placed onto the output window of ...
  • Electrophysical properties of metal-semiconductor-metal structures based on isovalently doped zinc selenide crystals 
    Chugai, O.; Ryzhikov, V.; Starzhinskiy, N.; Oleynik, S.; Katrunov, K.; Zenya, I. (Functional Materials, 2004)
    Electric capacitance C and dielectric losses tgδ have been determined for metal-semiconductor-metal structures based on isovalently doped ZnSe crystals. It has been shown that annealing of the grown crystals in zinc ...
  • Energy characteristics of scintillators for X-ray introscop 
    Ryzhikov, V.; Starzhinskiy, N.; Katrunov, K.; Grinyov, B.; Nekrasov, V.; Silin, V.; Spasov, V.; Galich, Yu.; Verbitskiy, O.; Zenya, I. (Functional Materials, 2004)
    In a broad energy range of X-ray radiation (U = 2 175 kV), we have studied output characteristics (light output, quantum yield of luminescence, etc.) of scintillators based on ZnSe crystals, as well as scintillators ...
  • Impact of codoping on structure, optical and scintillation properties of Gd₂Si₂O₇-based crystals 
    Gerasymov, Ya.V.; Baumer, V.N.; Neicheva, S.V.; Starzhinskiy, N.; Tarasov, V.A.; Zelenskaya, O.V.; Sidletskiy, O.Ts. (Functional Materials, 2013)
    Impact of codoping on structure, optical, and scintillation properties of Gd₂Si₂O₇:Ce (GPS:Ce) crystals doped with La³⁺ and Sc³⁺ have been considered. GPS:Sc,Ce and GPS:La,Ce crystals have been obtained by the Top Seeded ...
  • On luminescence kinetics of scintillators used in X-ray introscopy systems 
    Ryzhikov, V.; Starzhinskiy, N.; Seminozhenko, V.; Grinyov, B.; Nagornaya, L.; Spasov, V.; Katrunov, K.; Zenya, I.; Vyagin, O. (Functional Materials, 2004)
    Data are presented on the influence of various factors upon luminescence kinetics of scintillator crystals based on activated ZnSe, Csl, CWO and GSO. It is shown that the isovalent dopant type substantially affects the ...
  • On proportionality of the light output of semiconductor scintillators under irradiation by alpha-particles and heavy ions 
    Ryzhikov, V.; Klamra, W.; Starzhinskiy, N.; Gal’chinetskii, L.; Silin, V.; Lisetski, L.; Danshin, E.; Kapusta, M.; Szawlowski, M.; Katrunov, K.; Chernikov, V.; Tarasov, V.; Balcerzyk, M.; Moszyński, M. (Вопросы атомной науки и техники, 2004)
    In the energy range E =2.8...42.2 MeV, the light output S was measured for ZnSe-based scintillators under irradiation with α- particles and heavy ions 81Br. Under such irradiation, the proportionality S(Еα,i) is observed ...
  • On radiation-induced optical and luminescence phenomena in thermally pretreated GSO:Ce crystals 
    Nagornaya, L.; Starzhinskiy, N.; Bondar, V.; Grinyov, B.; Katrunov, K.; Loseva, E.; Onishchenko, G.; Ryzhikov, V.; Semynozhenko, V. (Functional Materials, 2005)
    Effects of thermal annealing in different gaseous media (vacuum, oxygen-containing and reductive atmospheres) upon main optical, luminescence, spectral kinetic, and scintillation characteristics of GSO:Се crystals - both ...
  • On the optimum geometric shapes of ZnSe-based scintillation elements 
    Katrunov, K.; Naydenov, S.; Ryzhikov, V.; Starzhinskiy, N.; Gal’chinetskii, L.; Gavril’uk, V.; Yanovsky, V. (Вопросы атомной науки и техники, 2004)
    We have carried out Monte-Carlo calculations of the light collection coefficient τ for different shapes of ZnSebased scintillators Applying a theoretical model, it has been shown, that the light collection optimization can ...
  • Radiation effects in semiconductor scintillators based on zinc selenide 
    Ryzhikov, V.; Koshkin, V.; Starzhinskiy, N.; Ibragimova, E.; Gafarov, A.; Kist, A.; Oksengendler, B.; Gal’chinetskii, L.; Katrunov, K.; Galkin, S.; Silin, V. (Вопросы атомной науки и техники, 2003)
    Effects have been studied of gamma-radiation (Еγ=1.25 МeV) in doses of DγЈ5.10⁹ rad upon light output and spectral-kinetic luminescence characteristics of new semiconductor scintillators (SCS) based on isovalently doped ...
  • Radiation-induced changes in dielectric and photoelectric properties of AᴵᴵBⱽᴵ crystals 
    Ryzhikov, V.; Starzhinskiy, N.; Chugai, O.; Seminozhenko, V.; Migal, V.; Komar, V.; Klimenko, I.; Katrunov, K.; Abashin, S.; Oleinik, S.; Sulima, S.; Zenya, I. (Functional Materials, 2004)
    To determine the kinetics of pre-threshold defect formation, studies have been carried out of dielectric permittivity of isovalently doped zinc selenide and Cd₁₋ₓZnₓTe crystals (x = 0.16). X-ray irradiation of the samples ...
  • Schottky structures nZnSe(O,Te)/Ni as candidates for selective ultraviolet detectors 
    Katrunov, K.; Starzhinskiy, N.; Grinyov, B.; Galchinetskii, L.; Bendeberya, G.; Bondarenko, E. (Functional Materials, 2008)
    Data on optical and electrophysical properties of photosensitive structures with Schottky barrier of nZnSe(O, Te)/Ni type are presented. The photoreceivers of this type have current sensitivity Sλ = 0.1-0.15 A/W for λ = ...
  • Studies of photoactive states of isovalently doped ZnSe crystals by the method of scanning photodielectric spectroscopy 
    Ryzhikov, V.; Starzhinskiy, N.; Chujai, O.; Migal, V.; Komar, V.; Katrunov, K.; Oleinik, S.; Zenya, I. (Functional Materials, 2004)
    Using methods of photodielectric spectroscopy, studies have been carried out of the energy level structure of the defect complexes in isovalently doped zinc selenide crystals. On variation of light wavelength (λ), small ...